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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MAC212FP/D Triacs MAC212FP Series MAC212AFP Series ISOLATED TRIACs THYRISTORS 12 AMPERES RMS 200 thru 800 VOLTS Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. * Blocking Voltage to 800 Volts * All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability * Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability * Gate Triggering Guaranteed in Three Modes (MAC212FP Series) or Four Modes (MAC212AFP Series) MT2 G MT1 CASE 221C-02 STYLE 3 MAXIMUM RATINGS (TJ = 25C unless otherwise noted.) Rating Repetitive Peak Off-State Voltage(1) (TJ = -40 to +125C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC212-4FP, MAC212A4FP MAC212-6FP, MAC212A6FP MAC212-8FP, MAC212A8FP MAC212-10FP, MAC212A10FP On-State RMS Current (TC = +85C) Full Cycle Sine Wave 50 to 60 Hz(2) Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +85C) preceded and followed by rated current Circuit Fusing (t = 8.3 ms) Peak Gate Power (TC = +85C, Pulse Width = 10 s) Average Gate Power (TC = +85C, t = 8.3 ms) Peak Gate Current (TC = +85C, Pulse Width = 10 s) RMS Isolation Voltage (TA = 25C, Relative Humidity Operating Junction Temperature Storage Temperature Range Symbol VDRM 200 400 600 800 IT(RMS) ITSM I2t PGM PG(AV) 12 100 40 20 0.35 2 1500 -40 to +125 -40 to +150 Amps Amps A2s Watts Watt Amps Volts C C Value Unit Volts p 20%) IGM V(ISO) TJ Tstg THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Thermal Resistance, Junction to Ambient Symbol RJC RCS RJA Max 2.1 2.2 (typ) 60 Unit C/W C/W C/W 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data (c) Motorola, Inc. 1995 1 MAC212FP Series MAC212AFP Series ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Peak Blocking Current (Either Direction) (VD = Rated VDRM, Gate Open) TJ = 25C TJ = +125C Peak On-State Voltage (Either Direction) (ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, Minimum Gate Pulse Width = 2 s) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) "A" SUFFIX ONLY Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, Minimum Gate Pulse Width = 2 s) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) "A" SUFFIX ONLY (Main Terminal Voltage = Rated VDRM, RL = 10 k, TJ = +125C) MT2(+), G(+); MT2(+), G(-); MT2(-), G(-) MT2(-), G(+) "A " SUFFIX ONLY Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 500 mA) Turn-On Time (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 s, Pulse Width = 2 s) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms, Gate Unenergized, TC = +85C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +85C) Symbol IDRM -- -- -- -- 1.3 10 2 1.75 Min Typ Max Unit A mA Volts mA p 2%) VTM IGT -- -- -- -- -- VGT 12 12 20 35 50 50 50 75 Volts -- -- -- -- 0.2 0.2 IH -- 0.9 0.9 1.1 1.4 -- -- 6 2 2 2 2.5 -- -- 50 mA tgt -- 1.5 -- s dv/dt(c) -- 5 -- V/s dv/dt -- 100 -- V/s TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) TYPICAL CHARACTERISTICS P D(AV), AVERAGE POWER DISSIPATION (WATT) 125 28 24 20 16 12 8.0 4.0 0 0 2.0 4.0 6.0 8.0 10 12 14 IT(RMS), RMS ON-STATE CURRENT (AMP) = CONDUCTION ANGLE dc = 180 90 60 30 115 = 30 85 = CONDUCTION ANGLE 60 90 180 dc 105 95 75 0 2.0 4.0 6.0 8.0 10 12 14 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 1. Current Derating Figure 2. Power Dissipation 2 Motorola Thyristor Device Data MAC212FP Series MAC212AFP Series 100 50 20 10 5 TJ = 25C TJ = 125C 100 I TSM , PEAK SURGE CURRENT (AMP) i T, INSTANTANEOUS ON-STATE CURRENT (AMPS) 80 60 CYCLE TC = 70C f = 60 Hz SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 40 2 1 0.5 20 0 1 2 3 NUMBER OF CYCLES 5 7 10 0.2 VGT , GATE TRIGGER VOLTAGE (NORMALIZED) 0.1 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 Figure 4. Maximum Nonrepetitive Surge Current 4.4 2 OFF-STATE VOLTAGE = 12 Vdc ALL MODES vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 3. Maximum On-State Characteristics 1.6 1.2 0.8 0.4 0 -60 -40 -20 0 20 40 60 80 TC, CASE TEMPERATURE (C) Figure 5. Typical Gate Trigger Voltage I GT, GATE TRIGGER CURRENT (NORMALIZED) 2 IH , HOLDING CURRENT (NORMALIZED) OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2.8 2.4 2 1.6 1.2 0.8 0.4 0 -60 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 1.6 1.2 0.8 0.4 0 -60 -40 -20 0 20 40 60 80 -40 -20 0 20 40 60 80 TC, CASE TEMPERATURE (C) TC, CASE TEMPERATURE (C) Figure 6. Typical Gate Trigger Current Figure 7. Typical Holding Current Motorola Thyristor Device Data 3 MAC212FP Series MAC212AFP Series r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 0.2 0.1 0.05 ZJC(t) = r(t) * RJC 0.02 0.01 0.1 0.2 0.5 1 2 5 20 50 t, TIME (ms) 100 200 500 1k 2k 5k 10 k Figure 8. Thermal Response 4 Motorola Thyristor Device Data MAC212FP Series MAC212AFP Series PACKAGE DIMENSIONS -B- P -T- F N E C S SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 --- 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 --- 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28 H -Y- Q 123 A STYLE 3: PIN 1. MT 1 2. MT 2 3. GATE K Z L G D 3 PL J R 0.25 (0.010) M B M Y CASE 221C-02 Motorola Thyristor Device Data 5 MAC212FP Series MAC212AFP Series Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 *MAC212FP/D* Motorola Thyristor Device Data MAC212FP/D |
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